Crystal structures of silicon-rich lithium silicides at high pressure

Silicon (Si) is one of the most essential elements, as it is indispensable for modern electronic technology. The standard Si structure at ambient conditions is the cubic diamond structure, and it has an indirect band gap, which prevents it from being considered as a next-generation platform for semiconductor technologies. Therefore, the search for new allotropes of silicon has attracted great attention. Herein, first principles swarm-intelligence structure searches coupled with density-functional theory were performed to explore the stable high-pressure phases of silicon-rich lithium containing compounds, LiSi_x ($x=4\text{–}8$). The LiSi₄ stoichiometry was predicted to be stable, and it was found to assume one of the following space groups, P4/mnc, Cmmm, and C2/m within the pressure range of 0 to 50 GPa. By removing the Li atoms from these compounds, three silicon allotropes were obtained that were metastable at ambient pressures. Our work illustrates how novel silicon allotropes can be predicted using the CALYPSO method.     

Co_2Si@C催化剂的合成及其加氢脱硫性能

采用微波法制备了Co_2Si@C催化剂并对其在加氢脱硫反应中的催化性能进行了研究.通过XRD、 XPS、 TEM和N_2-物理吸附表征分析Co_2Si@C催化剂的组成和结构. Co_2Si@C催化剂具有一致的介孔结构,高钴含量(21%)、高比表面积(116.6 m~2·g~(-1))和均匀分布的纳米粒子.由于硅原子对钴原子结构和参数的修饰、纳米粒子效应和高金属含量等因素, Co_2Si@C催化剂在温和的反应条件下(340℃和3.0 MPa)具有良好的加氢脱硫活性和对直接脱硫(DDS)反应途径的高选择性,产物联苯的选择性超过了60%.     

Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni-P/Si(1 0 0) systems

As metal-oxide-semiconductor field-effect transistor (MOSFET) devices are shrunk to the nanometer scale, flat shallow metal/Si electrical contacts must be formed in the source/drain region. This work demonstrates a method for the formation of epitaxial NiSi₂ layers by a solid-phase reaction in Ni-P(8 nm)/Si(1 0 0) samples. The results show that the sheet resistance remained low when the samples were annealed at temperatures from 400 to 700 °C. P atoms can be regarded as diffusion barriers against the supply of Ni to the Si substrate, which caused the formation of Si-rich silicide (NiSi₂) at low temperature. Furthermore, elemental P formed a stable capping layer with O, Ni and Si during the annealing process. A uniform NiSi₂ layer with an atomically flat interface was formed by annealing at 700 °C because of the formation of a Si-Ni-P-O capping layer and a reduction in the total interface area.     

感应熔炼高锰硅的结构和形貌特性

采用场发射扫描电镜(FESEM)和X射线能谱仪(EDXS)对感应熔炼高锰硅(HMS)中的第二相条纹的形貌和成份进行了研究,发现第二相条纹平行贯穿整个高锰硅晶粒,其条纹宽度约30nm,间距在5-30μm内,成份为MnSi.通过高分辨透射电镜(HRTEM)观察到MnSi条纹为短程有序而长程无序的非晶形态.采用选区电子衍射(SAED)确定了高锰硅的晶体结构,结果表明所获得的高锰硅为单一的Mn4Si7相,未观察到高锰硅其它的非公度结构.透射电镜(TEM)结果表明,熔炼的高锰硅经过球磨和热压后产生了大量缺陷和应力畴,与热压之前的熔锭材料相比有明显差异.     

SiC crystal growth from transition metal silicide fluxes

SiC crystal growth in transition metal silicide melts was investigated by using spontaneous infiltration and solution methods. In the infiltration experiments, SiC powder preforms were infiltrated with Fe_xSi_y (Fe₃Si, Fe₅Si₃ and FeSi) and CoSi melts. The dissolution and precipitation of SiC led to SiC crystals growth in the infiltrated Fe₅Si₃ and CoSi melts, SiC particles coalescing in FeSi and free carbon precipitation in Fe₃Si. In the solution experiments, carbon from the graphite crucible dissolved in and reacted with FeSi₂ and Ti_2.3Si_7.7 to form SiC crystals. Scanning electron microscopy (SEM), X‐ray diffraction (XRD) and Raman scattering spectrometer were employed to investigate SiC crystals growth. Based on the investigation, the effect of solution content on the SiC crystal growth, the growth mechanisms in both methods and prototypes of the SiC crystals are also discussed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Si衬底上生长的铁硅化合物结构和取向分析

采用分子束外延法分别在650-920 ℃的Si（110）和920 ℃的Si（111）衬底表面生长出铁的硅化物纳米结构,并主要分析了920 ℃高温下纳米结构的形貌、组成相及其与Si 衬底的取向关系. 扫描隧道显微镜（STM）研究表明,920 ℃高温下,Si（110）衬底上生长的铁硅化合物完全以纳米线的形式存在,且其尺寸远大于650 ℃低温下外延生长的纳米线尺寸;Si（111）衬底上生长出三维岛和薄膜两种形貌的铁硅化合物,其中三维岛具有金属特性且直径约300 nm、高约155 nm,薄膜厚度约2 nm. 电子背散射衍射研究表明920 ℃高温下Si（110）衬底上生长的纳米线仅以β-FeSi₂的形式存在,且β-FeSi₂相与衬底之间存在唯一的取向关系：β-FeSi₂（101）//Si（111）;β-FeSi₂ [010]//Si[110];Si（111）衬底上生长的三维岛由六方晶系的Fe₂Si 相组成,Fe₂Si 属于164 空间群,晶胞常数为a=0.405 nm,c=0.509 nm;与衬底之间的取向关系为Fe₂Si（001）∥Si（111）和Fe₂Si[120]//Si[112].     

Thin-film formation of Si clathrates on Si wafers

In this study, we prepared Si clathrate films (Na₈Si₄₆ and Na_xSi₁₃₆) using a single-crystalline Si substrate. Highly oriented film growth of Zintl-phase sodium silicide, which is a precursor of Si clathrate, was achieved by exposing Na vapour to Si substrates under an Ar atmosphere. Subsequent heat treatment of the NaSi film at 400 °C (3 h) under vacuum (<10⁻² Pa) resulted in a film of Si clathrates having a thickness of several micrometres. Furthermore, this technique enabled the selective growth of Na₈Si₄₆ and Na_xSi₁₃₆ using the appropriate crystalline orientation of Si substrates.     

Reciprocating sliding wear behavior of laser-clad small amplitude Mo2Ni3Si/NiSi metal silicide composite coatings

Mo₂Ni₃Si/NiSi metal silicide composite coatings with a fine microstructure consisting of Mo₂Ni₃Si primary dendrites and the interdendritic Mo₂Ni₃Si/NiSi eutectics were fabricated on austenitic stainless steel AISI 321 by laser cladding process. Small amplitude reciprocating sliding wear resistance of the coatings is evaluated as functions of normal load and slip amplitude and the wear mechanisms were discussed based on worn surface morphology observations. Results showed that the Mo₂Ni₃Si/NiSi coatings have excellent small amplitude reciprocating sliding wear resistance.     

Si(001)表面稀土金属硅化物纳米结构

稀土金属元素的硅化物在n型硅衬底上具有高电导率和低肖特基势垒的特点，在大规模集成的微电子器件领域具有很好的应用价值．文章系统介绍了在Si（001）表面自组装生长的稀土金属硅化物纳米结构的研究进展，较全面地讨论了退火温度、退火时间以及稀土金属表面覆盖度等生长条件对纳米结构生长的影响作用，并在此基础上分析了纳米线、纳米岛的晶化结构，衬底对纳米结构生长的影响，以及纳米结构的演化过程．搞清楚这些内在的生长机理，有助于人们今后实现可严格控制稀土金属硅化物纳米结构的形貌尺寸和分布的自组装生长．此外，文章还介绍了目前人们对稀土金属硅化物纳米线电学性质的研究进展．     

离子束合成钇硅化物的结构及红外谱特征

将稀土金属钇离子注入到n型单晶Si(111)中制备出钇硅化物埋层.利用x射线衍射、卢瑟福背散射和傅里叶红外吸收谱测量分析了样品的结构、原子的埋层分布和振动模式.结果表明，Y离子在注入过程中已与基底中的Si原子形成了YSi2结构相.真空下的红外光辐照处理促使YSi2择优取向生长，埋层中Si与Y的平均原子浓度比由24下降为20，与六方YSi2的化学计量比一致.还给出了钇硅化物的特征红外吸收谱.